Design of a GaAs-Based Ka-Band Low Noise Amplifier MMIC with Gain Flatness Enhancement

This paper presents a GaAs-based Ka-band low noise amplifier (LNA) with gain flatness enhancement. Active device optimization and inductive degeneration techniques were employed to obtain figure (NF) good input/output return loss. In order achieve flat response over wide bandwidth, the stagger tuning technique was utilized. The proposed LNA implemented by 0.15 μm GaAs pHEMT process, chip area is only 1.5 × 0.9 mm2. Measurement results show that presented exhibits small signal of 21.5 ± 0.3 dB, NF less than 2.2 dB from 32 40 GHz at room temperature.